The Elionix ELS-F100 is a high speed, ultra high precision thermal field emission (TFE) electron beam lithography system. The ELS-G100 is capable of generating patterns with a line width of 7nm. The system provides a stable 1.8nm electron beam using high beam current at 100kV. The fine line patterns can be drawn using commercially available resists.

Significantly small distortion enables uniform and stable fine pattern writing over large writing fields. Uniform 10nm lines can be drawn from the edge to the edge of a 500μm field without stitching. At a beam current of 1nA, 20nm lines can be written over an entire 500μm field without stitching. No stitching guarantees accuracy and eliminating the need for stage movement enhances writing speed.

• Generates patterns with a line width of 7nm
• Stable 1.8nm electron beam using high beam current at 100kV
• A 20bit DAC provides high beam positioning resolution
• At a beam current of 1nA, 20nm lines can be written over an entire 500μm field without stitching

If you plan to bring external materials into the lab, please notify the FabLab staff to ensure proper safety protocols and any equipment arrangements can be made ahead of your reservation. Please submit an External Materials Request form for each material you will bring.