Overview:

This state-of-the-art pulsed laser deposition MBE Facility is for the combinatorial growth of multi-functional oxide thin films and nanostructured materials. In situ (RHEED) and ex situ (STM/microwave microscopy) analytical tools are employed to obtain atomically resolved information on structure/composition gradients and fine tune the composition and process parameters.

Instrument Designations:

• Pascal Inc: Custom-designed UHV-Laser MBE Facility
• Intematix: Hybrid STM and Near Field Microwave Microscope

Key Specifications:

UHV-Laser MBE:

• Thin Film Star (Coherent Inc, Excimer Laser)
• Base pressure ~1x10-9 Torr (Main chamber), ~1x10-7 Torr (Load lock chamber)
• 6 target carrousel
• Susbtrate heating system; Laser heating up to ~900ºC
• Custom-designed masking system for fabricating combinatorial libraries
• RHEED (Pascal Inc)
• Automated by LabView

Multi-mode Microscope:

• Multi-mode Imaging
  • Topography
  • Tunneling Current
  • Microwave Impedance (complex permittivity)
  • Ferromagnetic Resonance
• Range of Acquisition Parameters for STM
  • Bias Voltage: -10 V - 10 V
  • Current: 10 nA
  • STM Spatial Resolution: 1Å
• Acquisition Parameters for Microwave Microscopy
  • Microwave Frequency: 2.5 GHz
  • Microwave Power: 10dBm
  • Microwave Impedance Spatial Resolution: 1 µm
  • DC Magnetic Field: -1000 to 1000 Gauss

Contacts: