September 25, 2017 UMD Home FabLab AIMLab
Description The STS Deep Reactive ion Etcher uses the Bosch process to cut deep, high aspect ratio channels in silicon. Used primarily for MEMs devices, the only materials permitted in this etcher are silicon wafers, photoresist and thin films of silicon dioxide and silicon nitride. All other materials are prohibited unless approved by FabLab staff.
Location FabLab | ETCH Tunnel
Manufacturer Surface Technology Systems
Staff Contact JonathanJonathan Hummel
301 405-5017
Discussion Link Etching Discussion Page
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External Non-profit / University
Small Commercial / MTECH
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Tue, Aug 29, 2017
5:30 pm - 6:30 pm
Sangwook Chu
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Fri, Aug 25, 2017
1:00 pm - 2:30 pm
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Thu, Aug 24, 2017
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Tue, Aug 22, 2017
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Wed, Aug 02, 2017
9:45 am - 11:00 am
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Records to show:
Intro to Plasma Etching.pdf (512.1 KB)
etch-08_etch_rate_check.xls (40 KB)
etch-08_etch_rate_history.xls (40 KB)
etch-08_sop_STS_DRIE.pdf (3.62 MB)
index.php (38 B)

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STS Etching Recipes

Chamber Clean Procedure.doc (26 KB)
DRIEconditioningrecipe.pdf (182.54 KB)
STS reboot.doc (24.5 KB)

Colleges A. James Clark School of Engineering
The College of Computer, Mathematical, and Natural Sciences

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