The world's first fully integrated Xe plasma source FIB with SEM enables extremely high ion currents up to 2.5 μA thus increasing sputtering rate more than 50 times compared to conventional Ga source FIB. This predetermines XEIA for milling big volumes of materials that were time consuming or impossible in the past.

The XEIA is a fully PC controlled SEM with Schottky field emission cathode in combination with Xe Plasma Focused Ion Beam (SEM-FIB) column and also fully equipped with Gas Injection System (GIS) for five different gases. With more than 20 ports in the newly designed large sample chamber, the XEIA also integrates a variety of nano-analytical capabilities in one single instrument. The XEIA equipped with:

• EDS (Energy Dispersive X-Ray Spectrometry)
• CL (Cathodoluminescence)

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