November 24, 2017 UMD Home FabLab AIMLab

Workshop on Defects in Wide Band Gap Semiconductors

September 23rd, 2014 - University of Maryland, College Park

Last updated: September 23, 2014, 3:10 pm

The complete program -- agenda, map, and abstracts -- is now available for download (70 pages, 5.4 MB).

7:00am
Continental Breakfast

Registration - Check-in and on-site registration

7:45 - 8:00am
Welcome Remarks

Robert Briber - Chair of UMD's Department of Materials Science & Engineering

8:00 - 8:30am
Workshop Objectives

Krishna Shenai - Systems Requirements
Power Switch Considerations

Aris Christou - Reliability Requirements
Wide Bandgap Semiconductor Reliability and Material Defects

Manijeh Razeghi - Material Requirements
Novel Approaches to Addressing the Challenge of Growing Defect-Free Wide Bandgap Semiconductors

8:30- 9:30am
Plenary Session: Related Programs

S. El-Ghazaly, D. Pavlidis - National Science Foundation
Defects and Manufacturing in Wide Bandgap Semiconductors

M. Johnson - Department of Energy

Peter Cho - Office of Naval Research Programs

K. Evans - PEIC Perspectives
The Business of Defects

9:30 - 10:45am
Invited Session 1: Key SiC Material Challenges

M. Laboda
Emerging Challenges in Evaluation of Silicon Carbide

T.S. Sudarshan
Defects in 4H-SiC epitaxial growth using tetrafluoridesilane as Si precursor

J. Narayan
Defects and Interfaces in Thin Film Heterostructures

B. Ragothamachar
Defect Origins and Behavior in Wide Band Gap Semiconductors

N. Mahadik
Observation of Stacking Faults from BPDs in Buffer Layers and Their Influence on Pulsed Power Devices

10:45 - 11:00am
Coffee Break (Poster Session)
11:00 - 12:00pm
Invited Session 2: Key GaN Material Challenges

S. Mahajan
Origins of Threading Dislocations in GaN Layers Grown on (0001) Sapphire Substrates

D. Demchenko
Theoretical and Experimental Identification of Point Defects in GaN

G. Imhoff
Processing-Related Defects in 4H SiC Devices

L. Salamanca-Riba
Structural and Chemical Characterization of the Transition Layer at the Interface of NO-annealed 4H-SiC/SiO2 Metal-Oxide-Semiconductor Field-Effect Transistors

12:00 - 1:00pm
Lunch & Poster Session
1:00 - 2:00pm
Rapid Presentation Session

J. Cumings
In-situ TEM studies: A bright future for wide-bandgap semiconductors?

M. Leite
Wide Bandgap Materials for Ultra-High Efficiency Solar Cells

A. Woodworth
Principles of bulk SiC growth by the Large Tapered Crystal growth process

M.E. Zvanut
The reduction in the number of Mg acceptors in AlxGa1-xN

E. Eritkin
Modeling the Excited State of Carbon Vacancy Defect in 4H-SiC

G. Subramanyam
Nondestructive Assessment of Surface and Subsurface Defects in Wide-bandgap Semiconductors using Photon Back Scattering

M. Reshchikov
HVPE-grown GaN with low concentration of point defects studied by photoluminescence

A. Mane
2D-Layered Transition Metal Dichalcogenides Growth by Atomic Layer Deposition for MOS Gate Channel Applications

J. Shen
Nanotechnology Enabled Defect Reduction in WBG Materials

A. Yanguas-Gil
The role of surface kinetics on surface morphology and defect evolution during WBG semiconductor epitaxy

A. Davydov
Selective HVPE growth on GaN core/shell pillar arrays in Si substrate

M. Sunkara
Self-oriented growth of Gallium Nitride on molten Gallium for large single crystals

2:00 - 4:00pm
Invited Session 3: Materials Related Challenges

J. Hite
Reduction and Identification of Extended Defects in GaN

K. Jones
Problems with Controlled Doping of GaN Below 1016 cm-3 J. Freitas, State of the Art of bulk III-nitride substrates and films for devices fabrication

J. Freitas
State of the Art of bulk III-nitride substrates and films for devices fabrication

R. Green
Influence of Near-Interfacial Oxide Traps on Stability and Reliability of Commercial SiC MOSFETs

J. Weil
Detection and Mitigation of Surface Defects in Transfer-Doped Single-Crystal Diamond Films

S. Pantelides
Defect-mediated degradation of III-V HEMTs

P. Lenahan
Electrically Detected Magnetic Resonance Observation of Performance Limiting Defects in 4H SiC MOSFETs

N. Goldsman
Passivation schemes for hole traps in 4H-SiC MOSFETs

4:00 - 4:15pm
Coffee Break
4:15 - 5:15pm
Break-Out Sessions

Condensed Matter Physics and Modeling
Moderators: N. Goldsman, P. Chung

Materials Synthesis and Characterization
Moderators: G. Subramanyan, M. Loboda

Failure Physics and Reliability Assessment
Moderator: P. McCluskey

5:15 - 6:00pm
Break-Out Session Presentations
15 minutes each
6:00 - 8:00pm
Reception & Dinner

Conference Support

National Science Foundation Center for Quantum Devices Argonne National Laboratory Department of Energy Office of Science Maryland NanoCenter A. James Clark School of Engineering University of Maryland Northwestern University

Colleges A. James Clark School of Engineering
The College of Computer, Mathematical, and Natural Sciences

Communicate Contact Us
Contact the Webmaster
Google+
Follow us on TwitterTwitter logo

Links Privacy Policy
Sitemap
RSS

Copyright The University of Maryland University of Maryland
2004-2017