September 23, 2017 UMD Home FabLab AIMLab

Workshop on Defects in Wide Band Gap Semiconductors

September 23rd, 2014 - University of Maryland, College Park

GALLIUM NITRIDE AND SILICON CARBIDE AND RELATED COMPOUNDS

  • Origin of Defects in wide band-gap semiconductors
  • Extended Defects in wide band-gap semiconductors
  • Defect reduction strategies
  • Atomic level control of material growth
  • Growth Optimization and Growth Yield
  • Defect dynamics in extreme environments

WIDE BANDGAP POWER DEVICES

  • Defect-device performance-reliability correlations
  • Defect-manufacturing yield correlations
  • The role of defects in wide bandgap power electronics
  • Defect modeling and defect-device performance models
  • Defect characterization, in-situ and in real time
  • Advanced defect characterization in both ground and excited states
  • Defect modeling in the ground and excited states
  • Manufacturing yield and cost reduction strategies

Conference Support

National Science Foundation Center for Quantum Devices Argonne National Laboratory Department of Energy Office of Science Maryland NanoCenter A. James Clark School of Engineering University of Maryland Northwestern University

Colleges A. James Clark School of Engineering
The College of Computer, Mathematical, and Natural Sciences

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