September 23rd, 2014 - University of Maryland, College Park

GALLIUM NITRIDE AND SILICON CARBIDE AND RELATED COMPOUNDS

• Origin of Defects in wide band-gap semiconductors
• Extended Defects in wide band-gap semiconductors
• Defect reduction strategies
• Atomic level control of material growth
• Growth Optimization and Growth Yield
• Defect dynamics in extreme environments

WIDE BANDGAP POWER DEVICES

• Defect-device performance-reliability correlations
• Defect-manufacturing yield correlations
• The role of defects in wide bandgap power electronics
• Defect modeling and defect-device performance models
• Defect characterization, in-situ and in real time
• Advanced defect characterization in both ground and excited states
• Defect modeling in the ground and excited states
• Manufacturing yield and cost reduction strategies

Conference Support